EE 432 - Physical Electronics

Unit(s): 3 Lecture: 3 hours

Semiconductor materials, crystal structure and growth; energy bands and charge carriers, conductivity, and mobility; metal-semiconductor and p-n junctions; p-n junction diodes, bipolar junction transistors, field-effect transistors, CCD’s, photonic devices, and integrated circuits. Projects in photolithography; conductivity and contact resistance measurements; I-V and C-V characteristics of diodes and characterization of transistors may be assigned.

Grading: GRD
Prerequisite(s): EE 230 or consent of Instructor.
Crosslisted: PHYS 475 and CES 432